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Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes

Title
Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes
Author
신동수
Keywords
Characterization; light-emitting diode; efficiency; optical loss; Mg diffusion
Issue Date
2016-04
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 52, NO 4, Page. 2081-2088
Abstract
We investigate the influence of p-(Al) GaN growth temperature (T-g) on the optoelectronic performances of InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs). We systematically combine various characterization techniques, such as current-voltage, current-light output power, capacitance-voltage (C-V) under forward and reverse biases, photocurrent and electroreflectance (ER) spectroscopies, temperature-dependent electroluminescence, and the internal quantum efficiency (IQE). From the experimental analyses, it is shown that increasing T-g induces: 1) the reduced optical loss by the improved crystal quality of the p-GaN layer (improved light extraction efficiency) and 2) the decreased IQE due to the Mg diffusion from the p-(Al) GaN layer to the MQW region. This paper demonstrates that the fine control of the Mg diffusion from the p-GaN layer to the InGaN/GaN MQW region is the key factor for achieving highly efficient blue LEDs. Moreover, a method of estimating the Mg diffusion length is proposed for the first time by analyzing both the C-V curves and the ER spectra under reverse biases.
URI
http://ieeexplore.ieee.org/document/7426339/http://hdl.handle.net/20.500.11754/50885
ISSN
0018-9197; 1558-1713
DOI
10.1109/JQE.2016.2538730
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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