The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- Title
- The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- Author
- 장재영
- Keywords
- organic field-effect transistors; gate-bias stabilities; fluorinated polymers
- Issue Date
- 2014-11
- Publisher
- WILEY-V C H VERLAG GMBH, BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY
- Citation
- ADVANCED MATERIALS, 권: 26, 호: 42, 페이지: 7241-7246
- Abstract
- Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field?effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate?bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.
- URI
- https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201402363http://hdl.handle.net/20.500.11754/50869
- ISSN
- 0935-9648; 1521-4095
- DOI
- 10.1002/adma.201402363
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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