66 0

The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Title
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
Author
장재영
Keywords
organic field-effect transistors; gate-bias stabilities; fluorinated polymers
Issue Date
2014-11
Publisher
WILEY-V C H VERLAG GMBH, BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY
Citation
ADVANCED MATERIALS, 권: 26, 호: 42, 페이지: 7241-7246
Abstract
Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field?effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate?bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.
URI
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201402363http://hdl.handle.net/20.500.11754/50869
ISSN
0935-9648; 1521-4095
DOI
10.1002/adma.201402363
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE