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Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

Title
Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
Author
신동수
Issue Date
2014-11
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS; NOV 10 2014, 105 19, 4p.
Abstract
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50-300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al) GaN layer. (C) 2014 AIP Publishing LLC.
URI
https://aip.scitation.org/doi/abs/10.1063/1.4902023http://hdl.handle.net/20.500.11754/50861
ISSN
0003-6951
DOI
10.1063/1.4902023
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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