Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

Abstract

Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a crossbarmemory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole):PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate(polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random accessmemory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memorycharacteristics: i.e., a set voltage of 1.0 V, a reset voltage of ?1.6 V, retention time of >1 × 105 swith a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memorymargin of 8.4 × 105, and bending-fatigue-free cycles of ∼1×103 with a memory margin (Ion/Ioff)of 3.3 × 105.