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Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

Title
Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode
Author
박재근
Keywords
flexible memory; CBRAM; nonvolatile; polymer memory; organic memory; conductive-bridging
Issue Date
2014-10
Publisher
IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Citation
Nanotechnology, 25권, 43호,
Abstract
Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a crossbarmemory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole):PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate(polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random accessmemory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memorycharacteristics: i.e., a set voltage of 1.0 V, a reset voltage of ?1.6 V, retention time of >1 × 105 swith a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memorymargin of 8.4 × 105, and bending-fatigue-free cycles of ∼1×103 with a memory margin (Ion/Ioff)of 3.3 × 105.
URI
http://iopscience.iop.org/article/10.1088/0957-4484/25/43/435204/metahttp://hdl.handle.net/20.500.11754/50670
ISSN
0957-4484; 0957-4484
DOI
10.1088/0957-4484/25/43/435204
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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