Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Abstract

We present the oxygen ion drift-based resistive switching features of TiO x /TiO y bi-layer homo-junctions. The TiO x layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO 2 , while the TiO y layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO 2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.