204 0

High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

Title
High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
Author
박재근
Keywords
IGZO TFT; Stability; NBIS; Si doped; THIN-FILM TRANSISTORS; PERFORMANCE
Issue Date
2014-10
Publisher
Korean Physical Society; 1999
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 65권, 7호, 1174-1178
Abstract
We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V (th) ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO (X) distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O-2. This process is applicable to the TFT manufacturing process with a variable sputtering target.
URI
http://dx.doi.org/10.3938/jkps.65.1174http://hdl.handle.net/20.500.11754/50332
ISBN
1976-8524
ISSN
0374-4884
DOI
10.3938/jkps.65.1174
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE