High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
- Title
- High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
- Author
- 박재근
- Keywords
- IGZO TFT; Stability; NBIS; Si doped; THIN-FILM TRANSISTORS; PERFORMANCE
- Issue Date
- 2014-10
- Publisher
- Korean Physical Society; 1999
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 65권, 7호, 1174-1178
- Abstract
- We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V (th) ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO (X) distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O-2. This process is applicable to the TFT manufacturing process with a variable sputtering target.
- URI
- http://dx.doi.org/10.3938/jkps.65.1174http://hdl.handle.net/20.500.11754/50332
- ISBN
- 1976-8524
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.65.1174
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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