32 0

The performance and negative bias illumination stability of Hf-In-Zn-O thin film transistors on sputtering conditions

Title
The performance and negative bias illumination stability of Hf-In-Zn-O thin film transistors on sputtering conditions
Author
박진성
Keywords
Hf-In-Zn-O (HIZO); negative bias illumination stability (NBIS); oxide semiconductor; thin film transistor
Issue Date
2014-05
Publisher
SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Citation
JOURNAL OF ELECTROCERAMICS, 권: 32, 호: 2-3, 페이지: 220-223
Abstract
This study examined the performance and stability of amorphous Hf-In-Zn-O (a-HIZO) thin film transistors (TFTs) with different sputtering conditions (DC and RF) for the active layer. The field-effect mobility and stability under negative bias illumination stress for the DC device significantly improved to 13.7 cm(2)/Vs and -1.5 V shift of threshold voltage, respectively, compared to those (2.4 cm(2)/Vs and -2.4 V shift) for the RF device. It is suggested that the incorporation of hydrogen into the RF-sputtered HIZO film has generated larger defect states in the vicinity of the HIZO/gate insulator interface, which may act as hole trap centers. This work demonstrates that the oxide TFTs combined with DC magnetron sputtering will be a prominent candidate for commercial production of the TFT backplane toward next-generation display applications.
URI
https://link.springer.com/article/10.1007%2Fs10832-013-9876-yhttp://hdl.handle.net/20.500.11754/49724
ISSN
1385-3449; 1573-8663
DOI
10.1007/s10832-013-9876-y
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE