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dc.contributor.author방진호-
dc.date.accessioned2018-03-20T06:52:01Z-
dc.date.available2018-03-20T06:52:01Z-
dc.date.issued2014-05-
dc.identifier.citationMICROELECTRONIC ENGINEERING, 권: 119, 페이지: 169-173en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1521-3757-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0167931714001968-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/49683-
dc.description.abstractThe improved performance of hybrid solar cells was obtained due to the effects of CdSe quantum dots (QDs) blended in the active layer. Different concentrations of CdSe QDs were mixed in the poly(3-hexylthiophene):[6,6]-phenyl C-61 butyric acid methyl ester (P3HT:PCBM) based active layer. We investigated the effects of CdSe QDs on the solar cell performances by ranging its concentration from 2 to 24 mg/mL. The charge transport in the active layer was improved at the optimized CdSe QDs concentration of 6 mg/mL. The solar cell with pristine active layers showed a 2.98% power conversion efficiency while that with 6 mg/mL CdSe QDs blended in layer showed a higher power conversion efficiency of 3.35% under AM 1.5G illumination. Analysis of recombination mechanism using the current density-voltage (J-V) characteristic at various light intensities was also performed. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the Human Resources Development program (No. 20124010203280) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea Government Ministry of Trade, Industry and Energy.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSen_US
dc.subjectHybrid solar cellen_US
dc.subjectP3HT:PCBMen_US
dc.subjectCdSe quantum doten_US
dc.subjectRecombination mechanismen_US
dc.titleOptimization of CdSe quantum dot concentration in P3HT:PCBM layer for the improved performance of hybrid solar cellsen_US
dc.typeArticleen_US
dc.relation.volume119-
dc.identifier.doi10.1016/j.mee.2014.05.003-
dc.relation.page169-173-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorPark, Eung-Kyu-
dc.contributor.googleauthorKim, Jae-Hyoung-
dc.contributor.googleauthorJi, In Ae-
dc.contributor.googleauthorChoi, Hye Mi-
dc.contributor.googleauthorKim, Ji-Hwan-
dc.contributor.googleauthorLim, Ki-Tae-
dc.contributor.googleauthorBang, Jin Ho-
dc.contributor.googleauthorKim, Yong-Sang-
dc.relation.code2014036027-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjbang-
dc.identifier.researcherIDA-4850-2016-
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