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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

Title
Atomic layer deposition of HfO2 thin films using H2O2 as oxidant
Author
정두석
Keywords
Atomic layer deposition; HfO2; H2O2
Issue Date
2014-05
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
APPLIED SURFACE SCIENCE, 권: 301, 페이지: 451-455
Abstract
HfO2 films were deposited by atomic layer deposition (ALD) using Hf[(C2H5)(CH3)N](4) and H2O2 at a temperature range of 175-325 degrees C. The growth per cycle of the HfO2 films decreased with increasing temperature up to 280 degrees C and then abruptly increased above 325 degrees C as a result of the thermal decomposition of the precursor. Although the HfO2 films grown with H2O2 exhibited slightly higher carbon contents than those grown with H2O, the leakage properties of the HfO2 films grown with H2O2 were superior to those of the HfO2 films grown with H2O. This is because the HfO2 films grown with H2O2 were fully oxidized as a result of the strong oxidation potential of H2O2. The use of the ALD process with H2O2 also revealed the conformal growth of HfO2 films on a SiO2 hole structure with an aspect ratio of similar to 15. This demonstrates that using the ALD process with H2O2 shows great promise for growing robust HfO2 films. (C) 2014 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0169433214004024?via%3Dihubhttp://hdl.handle.net/20.500.11754/49673
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2014.02.098
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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