Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography

Title
Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography
Author
정정주
Keywords
SCANNING TUNNELING MICROSCOPE; ATOMIC-FORCE MICROSCOPE; ANODIZATION LITHOGRAPHY; PROBE LITHOGRAPHY; ELECTRON-BEAM; PALMITIC ACID; NANOFABRICATION; NANOLITHOGRAPHY; SILICON; NANOSTRUCTURES
Issue Date
2012-04
Publisher
Institute of Physics; 1999
Citation
Nanotechnology, 2012, 23(18), P.185307
Abstract
Electrochemical AFM lithography was used to directly fabricate copper nanowires. The copper ions were strongly reduced by a negative sample bias at the point where the AFM tip was localized, and copper metal wires were successfully fabricated following the direction of the electrical field of the bias. A TDA (.) HCl self-assembled monolayer (SAM) was found to play an important role as an intermediate layer for enhancing the capability of high resolution and complete development after the AFM lithographic process. The physical and electrical properties of the wires were analyzed by AFM, EFM, SEM, TEM and I-V measurement. The fabricated copper has promising potential for applications such as masks and interconnectors for nanoelectronic devices.
URI
http://iopscience.iop.org/article/10.1088/0957-4484/23/18/185307/metahttp://hdl.handle.net/20.500.11754/49629
ISSN
0957-4484
DOI
10.1088/0957-4484/23/18/185307
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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