Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-20T05:34:01Z | - |
dc.date.available | 2018-03-20T05:34:01Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | Ceramics international, Vol.40 No.2 [2014], pp. 3215-3220 | en_US |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0272884213012212?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/49541 | - |
dc.description.abstract | The device performance and bias stability of radio frequency (RF) sputtered Ge-doped InGaO (GIGO) thin film transistors (TFTs) were investigated as a function of oxygen partial pressure during the deposition step. At low oxygen partial pressure, the electrical performance and stability of GIGO TFTs were significantly improved with a decrease of oxygen deficient bonding states, suggesting strong oxygen bonding ability of Ge atoms. We demonstrate that these changes can be corroborated with the evolution of the electronic structure, such as band alignment and band edge states below the conduction band, as measured by X-ray photoelectron spectroscopy and spectroscopic ellipsometry analysis. As the oxygen partial pressure decreased, the energy difference between the conduction band minimum and Fermi level and the deep band edge states was decreased. In particular, it was revealed that, with an increase of oxygen partial pressure, the relative energy level of the band edge states was shifted to a deeper level within the bandgap. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved. | en_US |
dc.description.sponsorship | This research was partially supported by the Basic Science Research Program through the National Research Foundation of Korea(NRF), funded by the Ministry of Education, Science and Technology(No.2012011730). This work was partially supported by the ITR & DProgram of MKE/KETI (Grantno. 10041416, the core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W) and by the MSIP (Ministry of Science, ICT & Future Planning) under the ITRC Support Program NIPA-2013- (H0301-13-1004) supervised by the NIPA. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Oxide semiconductor | en_US |
dc.subject | Thin film transistor | en_US |
dc.subject | Ge-In-Ga-O | en_US |
dc.subject | Oxygen pressure | en_US |
dc.subject | Bias stability | en_US |
dc.title | The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 40 | - |
dc.identifier.doi | 10.1016/j.ceramint.2013.09.118 | - |
dc.relation.page | 3215-3220 | - |
dc.relation.journal | CERAMICS INTERNATIONAL | - |
dc.contributor.googleauthor | Lee, Kwang-Ho | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Kim, H. | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | 박진성 | - |
dc.relation.code | 2014027011 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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