25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors

Title
25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors
Author
김도환
Keywords
organic electronics; organic field-effect transistors; bias-stability; organic semiconductors; microstructure
Issue Date
2014-02
Publisher
WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Citation
ADVANCED MATERIALS; MAR 2014, 26, 11, p1660-p1680,
Abstract
Recent studies of the bias-stress-driven electrical instability of organic field-effect transistors (OFETs) are reviewed. OFETs are operated under continuous gate and source/drain biases and these bias stresses degrade device performance. The principles underlying this bias instability are discussed, particularly the mechanisms of charge trapping. There are three main charge-trapping sites: the semiconductor, the dielectric, and the semiconductor-dielectric interface. The charge-trapping phenomena in these three regions are analyzed with special attention to the microstructural dependence of bias instability. Finally, possibilities for future research in this field are presented. This critical review aims to enhance our insight into bias-stress-induced charge trapping in OFETs with the aim of minimizing operational instability.
URI
http://onlinelibrary.wiley.com/doi/10.1002/adma.201304665/fullhttp://hdl.handle.net/20.500.11754/49293
ISSN
0935-9648
DOI
10.1002/adma.201304665
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > CHEMICAL ENGINEERING(화학공학과) > Articles
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