Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
- Title
- Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
- Author
- 박진섭
- Keywords
- Semiconductor; Thin films; Epitaxial growth; Atomic force microscopy
- Issue Date
- 2012-09
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Materials research bulletin, 2012, 47(10), P.2875-2878
- Abstract
- We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.
- URI
- https://www.sciencedirect.com/science/article/pii/S0025540812002474?via%3Dihubhttp://hdl.handle.net/20.500.11754/49226
- ISSN
- 0025-5408
- DOI
- 10.1016/j.materresbull.2012.04.044
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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