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Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

Title
Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
Author
박진섭
Keywords
Semiconductor; Thin films; Epitaxial growth; Atomic force microscopy
Issue Date
2012-09
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Materials research bulletin, 2012, 47(10), P.2875-2878
Abstract
We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.
URI
https://www.sciencedirect.com/science/article/pii/S0025540812002474?via%3Dihubhttp://hdl.handle.net/20.500.11754/49226
ISSN
0025-5408
DOI
10.1016/j.materresbull.2012.04.044
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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