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dc.contributor.author전형탁-
dc.date.accessioned2018-03-19T08:35:41Z-
dc.date.available2018-03-19T08:35:41Z-
dc.date.issued2014-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 권: 150, 호: 20en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.4902244-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/49095-
dc.description.abstractIn this paper, we investigated the interface band alignment of TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 (TiN/ZAZ) structures by analyzing the conduction band offset (CBO) and valence band offset at the electrode/dielectric interface using depth-resolved spectroscopy techniques. At the center of the interface, which is defined by the chemical composition depth profile, CBO values of 2.03 eV and 2.57 eV for ZrO2 and ZAZ were found, respectively. Subcutaneous TiON, which is induced by the process, was identified at this interface, and it played an important role in creating sub-band states. Based on combined analyses on both intrinsic and sub-band structures, a band alignment model is proposed. It was confirmed that the Al2O3 layer in ZAZ leads to a lowering of the Fermi energy or a p-doping effect, thereby increasing both the CBO and the tunneling barrier height in metal-insulator-metal capacitors. (C) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipThis research was supported by the Samsung Electronics Industry-University research program, the Basic Science Program (NRF-2009-0094046) through the National Research Foundation (NRF) of MEST, Republic of Korea, and the Basic Science Program (NRF-2012R1A1A1005014) through the NRF funded by the Ministry of Science, ICT and Future Planning. This work was also partially supported by the Ajou university research fund.en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAen_US
dc.subjectTiN/ZrO2en_US
dc.subjectTiN/ZrO2-Al2O3-ZrO2en_US
dc.subjectCBOen_US
dc.titleDepth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitorsen_US
dc.title.alternativeZrO2 and TiNen_US
dc.typeArticleen_US
dc.relation.no20-
dc.relation.volume105-
dc.identifier.doi10.1063/1.4902244-
dc.relation.page201603-201603-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorLee, SangYeon-
dc.contributor.googleauthorChang, Jae-wan-
dc.contributor.googleauthorKim, Youn-soo-
dc.contributor.googleauthorLim, Han-Jin-
dc.contributor.googleauthorJeon, Hyeong-tag-
dc.contributor.googleauthorSeo, Hyung-tak-
dc.relation.code2014025338-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
dc.identifier.researcherIDP-3193-2015-
dc.identifier.orcidhttp://orcid.org/0000-0003-2502-7413-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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