Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2018-03-19T08:13:00Z | - |
dc.date.available | 2018-03-19T08:13:00Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | CHEMISTRY OF MATERIALS, 권: 26, 호: 22, 페이지: 6467-6479 | en_US |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.issn | 1520-5002 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/cm5030266 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/49074 | - |
dc.description.abstract | With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between poly(pentafluorostyrene) (PFS) and mercaptopropyltrimethoxysilane is used to synthesize a graftable fluorinated polymer (gPFS). The surface characteristics of the gPFS-treated SiO2 dielectrics and the crystal structure and grain growth of the overlying organic semiconductors are investigated. Various semiconductor materials are employed for the OFETs prepared with gPFS-treated SiO2 dielectrics, including vacuum-processed pentacene, N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene, and poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophen-5-yl)ethane. Three OFETs are prepared with different dielectrics: (i) bare SiO2, (ii) gPFS-treated SiO2, and (iii) perfluorooctyltriethoxysilane-treated SiO2. The OFETs prepared with the gPFS-treated SiO2 dielectrics display the highest mobilities and smallest hysteresis. Furthermore, the gPFS-treated SiO2 provides the best device stability under a sustained gate bias, suggesting that the gPFS surface minimize the number of traps present in the OFET. | en_US |
dc.description.sponsorship | This work was supported by a grant from the Korea Science and Engineering Foundation (KOSEF), funded by the Korean Government (MEST) (NRF-2014R1A2A1A05004993 and NRF-2014R1A1A1005896) and was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (201206047047). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.subject | gPFS-treated | en_US |
dc.subject | SiO2 | en_US |
dc.subject | bare SiO2 | en_US |
dc.title | Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 26 | - |
dc.identifier.doi | 10.1021/cm5030266 | - |
dc.relation.page | 6467-6476 | - |
dc.relation.journal | CHEMISTRY OF MATERIALS | - |
dc.contributor.googleauthor | Kim, Kyung-hun | - |
dc.contributor.googleauthor | An, Tae-Kyu | - |
dc.contributor.googleauthor | Kim, Ji-ye | - |
dc.contributor.googleauthor | Jeong, Yong-Jin | - |
dc.contributor.googleauthor | Jang, Jae-young | - |
dc.contributor.googleauthor | Kim, Hae-kyung | - |
dc.contributor.googleauthor | Baek, Jang-Yeol | - |
dc.contributor.googleauthor | Kim, Yun-Hi | - |
dc.contributor.googleauthor | Kim, Se-Hyun | - |
dc.contributor.googleauthor | Park, Chan-Eon | - |
dc.relation.code | 2014027123 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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