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Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors

Title
Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors
Author
장재영
Keywords
gPFS-treated; SiO2; bare SiO2
Issue Date
2014-11
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
CHEMISTRY OF MATERIALS, 권: 26, 호: 22, 페이지: 6467-6479
Abstract
With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between poly(pentafluorostyrene) (PFS) and mercaptopropyltrimethoxysilane is used to synthesize a graftable fluorinated polymer (gPFS). The surface characteristics of the gPFS-treated SiO2 dielectrics and the crystal structure and grain growth of the overlying organic semiconductors are investigated. Various semiconductor materials are employed for the OFETs prepared with gPFS-treated SiO2 dielectrics, including vacuum-processed pentacene, N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene, and poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophen-5-yl)ethane. Three OFETs are prepared with different dielectrics: (i) bare SiO2, (ii) gPFS-treated SiO2, and (iii) perfluorooctyltriethoxysilane-treated SiO2. The OFETs prepared with the gPFS-treated SiO2 dielectrics display the highest mobilities and smallest hysteresis. Furthermore, the gPFS-treated SiO2 provides the best device stability under a sustained gate bias, suggesting that the gPFS surface minimize the number of traps present in the OFET.
URI
https://pubs.acs.org/doi/abs/10.1021/cm5030266http://hdl.handle.net/20.500.11754/49074
ISSN
0897-4756; 1520-5002
DOI
10.1021/cm5030266
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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