Photoelectrochemical oxygen evolution improved by a thin Al2O3 interlayer in a NiOx/n-Si photoanode

Title
Photoelectrochemical oxygen evolution improved by a thin Al2O3 interlayer in a NiOx/n-Si photoanode
Author
이정호
Keywords
Silicon; Photoanode; Aluminum trioxide; Interlayer; Nickel oxide; Catalyst; Oxygen evolution reaction; Photoelectrochemical cell; ATOMIC LAYER DEPOSITION; WATER OXIDATION; SILICON PHOTOANODES; NICKEL-OXIDE; BEHAVIOR; FILMS; PERFORMANCE; HEMATITE; CELLS
Issue Date
2016-01
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 599, Page. 54-58
Abstract
We employ a thin Al2O3 interlayer between p-NiOX catalyst/n-Si photoanode interfaces to realize an effective oxygen evolution reaction (OER). The Al2O3 interlayer is used to reduce the interface defect density, enhance the band bending by suppressing the Fermi-level pinning effect, and enhance photovoltage at the catalyst/ semiconductor rectifying junction. Our NiOX/Al2O3/n-Si photoanodes generated a photocurrent of 3.36 mA/cm(2) at the equilibrium potential of OER (E-OER = 1.23 V vs. reversible hydrogen electrode in 1 M NaOH solution) and a solar-to-oxygen conversion efficiency of 0.321%. Moreover, the photoanode showed no sign of decay over 20 h of photoelectrochemical water oxidation. (C) 2015 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0040609015013127http://hdl.handle.net/20.500.11754/48723
ISSN
0040-6090
DOI
10.1016/j.tsf.2015.12.062
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ETC
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