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Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et2InN(SiMe3)(2)

Title
Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et2InN(SiMe3)(2)
Author
박진성
Keywords
indium oxide; atomic layer deposition; transparent conducting oxide; resistivity
Issue Date
2014-09
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
ACS APPLIED MATERIALS & INTERFACES, 2014, 6(20), p.7481-17488
Abstract
Highly conductive indium oxide films, electrically more conductive than commercial sputtered indium tin oxide films films, were deposited using a new liquid precursor Et2InN(SiMe3)(2) and H2O by atomic layer deposition (ALD) at 225-250 degrees C. Film resistivity can be as low as 2.3 x 10(-4)-5.16 x 10(-5) Omega.cm (when deposited at 225-250 degrees C). Optical transparency of >80% at wavelengths of 400-700 nm was obtained for all the deposited films. A self-limiting ALD growth mode was found 0.7 angstrom/cycle at 175-250 degrees C. X-ray photoelectron spectroscopy depth profile analysis showed pure indium oxide thin film without carbon or any other impurity. The physical and chemical properties were systematically analyzed by transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, optical spectrometer, and hall measurement; it was found that the enhanced electrical conductivity is attributed to the oxygen deficient InOx phases.
URI
https://pubs.acs.org/doi/10.1021/am502085chttp://hdl.handle.net/20.500.11754/48301
ISSN
1944-8244
DOI
10.1021/am502085c
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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