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Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere

Title
Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere
Author
박진성
Keywords
THIN-FILM; TEMPERATURE; TRANSPARENT; DEFECTS
Issue Date
2012-02
Publisher
ELECTROCHEMICAL SOCIETY AND INSTITUTE OF ELECTRONICS ENGINEERS
Citation
Electrochemical and solid-state letters, 2012, 15(4), P.H133-H135, 3P.
Abstract
RF-sputtered ZnO films were annealed under various annealing ambient atmospheres, including a vacuum, air, and water vapor. The physical and electrical properties of ZnO films annealed in various ambient atmospheres, were studied as a function of annealing temperature. The carrier concentration was dramatically increased, and the mobility was decreased when the films were annealed in a vacuum or water vapor. Even though the annealing ambient atmosphere and temperature were different, the preferred orientation and crystallization of the annealed ZnO films are maintained. However, two distinct band edge states below the conduction band, observed by spectroscopic ellipsometry measurement, undergo a thermal change as a function of annealing ambient atmosphere and these changes are correlated to changes in carrier concentration and mobility. (C) 2012 The Electrochemical Society.
URI
http://esl.ecsdl.org/content/15/4/H133
ISSN
1099-0062; 1944-8775
DOI
10.1149/2.005205esl
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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