Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy
- Title
- Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy
- Author
- 안진호
- Keywords
- PATTERN PRINTABILITY; HARMONIC-GENERATION; PHASE RETRIEVAL; LITHOGRAPHY; ABSORBER; PERFORMANCE; FLARE; ANGLE
- Issue Date
- 2014-04
- Publisher
- AVS, American Institute of Physics
- Citation
- Journal of Vacuum Science & Technology. B, 2014, 32(3)
- Abstract
- The authors evaluated the feasibility of using coherent scattering microscopy (CSM) as an actinic metrology tool by employing it to determine the critical dimension (CD) and normalized image log-slope (NILS) values of contaminated extreme ultraviolet (EUV) masks. CSM was as effective as CD scanning electron microscopy (CD-SEM) in measuring the CD values of clean EUV masks in the case of vertical patterns (nonshadowing effect); however, only the CSM could detect shadowing effect for horizontal patterns resulting in smaller clear mask CD values. Owing to weak interaction between the low-density contaminant layer and EUV radiation, the CSM-based CD measurements were not as affected by contamination as were those made using CD-SEM. Furthermore, CSM could be used to determine the NILS values under illumination conditions corresponding to a high-volume manufacturing tool. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
- URI
- https://avs.scitation.org/doi/10.1116/1.4873697
- ISSN
- 1071-1023
- DOI
- 10.1116/1.4873697
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
- 1.4873697.pdfDownload
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