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Conductivity Enhancement of Silicon Nanowires

Title
Conductivity Enhancement of Silicon Nanowires
Author
이성재
Keywords
Conductivity; Silicon nanowire
Issue Date
2012-12
Publisher
한국물리학회
Citation
Journal of the Korean Physical Society, Dec 2012, 61(12), P.1990-1993, 4P.
Abstract
Current-voltage (I-V) characteristics for various silicon wires of different length-to-width ratios were numerically calculated by solving the Poisson equation and the current continuity equations for electrons and holes self-consistently. We found that, as the silicon wire became thinner or the length-to-width aspect ratio becomes higher, the I-V data deviated more from the Ohmic relation: the current density at a certain bias voltage was larger. In the case of a 500-nm-long silicon wire with n-type doping of 1 × 1016 cm3, for example, the current density of a silicon wire at a bias voltage of 2 volts increased by nearly threefold as the length-to-width ratio of wires was increased from 1 to 25. This behavior is attributed to an enhanced field at the source due to the strong stray field configuration near the contacts at both ends of a wire and to the large carrier build-up in the middle. Our result suggests that a classical treatment of nanowire transport with a proper account of the nonuniform field distribution along the wire may partly explain the conductivity enhancement phenomenon often observed in various nanowires and nanotubes.
URI
https://link.springer.com/article/10.3938%2Fjkps.61.1990http://hdl.handle.net/20.500.11754/47781
ISSN
0374-4884
DOI
10.3938/jkps.61.1990
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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