178 0

Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios

Title
Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios
Other Titles
Sn ratios
Author
박진성
Keywords
Thin film transistor; Oxide semiconductor; Solution process; THIN-FILM TRANSISTORS; SEMICONDUCTOR
Issue Date
2014-02
Publisher
SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Citation
JOURNAL OF ELECTROCERAMICS, 권: 32, 호: 4, 페이지: 319-323
Abstract
Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 A degrees C. As the Sn ratio in ZTO films increased, the values of saturated mobility (u(sat)) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the mu(sat) and SS values were a maximum (3.4 cm(2)/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1).
URI
https://link.springer.com/article/10.1007%2Fs10832-014-9902-8http://hdl.handle.net/20.500.11754/47766
ISSN
1385-3449; 1573-8663
DOI
10.1007/s10832-014-9902-8
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE