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Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant

Title
Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant
Author
박진성
Keywords
SnO2; Transparent conducting oxide (TCO); Atomic layer deposition (ALD); TDMASn; Ozone
Issue Date
2014-02
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
SURFACE & COATINGS TECHNOLOGY,권: 259 ,페이지: 238-243
Abstract
Highly conductive SnO2 thin films were grown by atomic layer deposition (ALD) in a wide growth temperature range (50 degrees C-250 degrees C), using a tetrakis-dimethyl-amine tin (TDMASn) precursor and an ozone reactant. The ozone SnO2 ALD thin films showed excellent electrical properties (5.63 x 10(-4) Omega cm) over 200 degrees C, but the electrical properties of the films were not measured at low growth temperature (under 125 degrees C). In order to verify the origin of the electrical properties as a function of growth temperature, the growth behavior and chemical bonding states, film crystallinity, surface roughness, and optical properties were examined. The ALD ozone SnO2 thin films deposited above the 200 degrees C growth temperature had high carrier concentration (3.2 x 10(20)-1.2 x 10(21)) and Hall mobility (similar to 32 cm(2) V/s). Also, films deposited at 250 degrees C exhibited a polycrystalline structure and high transmittance (over 80% at 550 nm wavelength). As a transparent conductive oxide material, the film properties of ALD ozone SnO2 thin films are very suitable due to their excellent high conductivity and reasonable transmittance. (c) 2014 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0257897214001121?via%3Dihubhttp://hdl.handle.net/20.500.11754/47755
ISSN
0257-8972
DOI
10.1016/j.surfcoat.2014.02.012
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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