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dc.contributor.author박진구-
dc.date.accessioned2018-03-16T01:52:32Z-
dc.date.available2018-03-16T01:52:32Z-
dc.date.issued2014-06-
dc.identifier.citationMICROELECTRONIC ENGINEERING, 권: 122, p 33-39en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1521-3757-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0167931714000707-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/47660-
dc.description.abstractCopper surfaces can become contaminated by slurry particles and organic residues during chemical mechanical planarization (CMP). Silica particles are widely used as abrasives, while benzotriazole (BTA) is widely used as corrosion inhibitor, in copper CMP slurries. The contaminated copper surface needs to be cleaned by using an effective cleaning solution. These material contaminate the copper surface during CMP and need to be removed by using an effective cleaning solution. The objectives of this work were to develop a non-amine-based alkaline cleaning solution and characterize the solution based on the benzotriazole (organic residue) removal and particle removal efficiency. Cesium hydroxide and potassium hydroxide were used as cleaning agents and ethylene glycol was used as a corrosion inhibitor. Ethylene glycol acts as a chelating agent as well in the cleaning composition. BTA removal was characterized using contact angle measurements, X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy (EIS) techniques. The corrosion protection ability of the cleaning solutions was quantified by potentiodynamic polarization studies. Both potassium hydroxide- and cesium hydroxide-based solutions exhibited high BTA and silica particle removal. When compared to a potassium hydroxide based cleaning solution, cesium hydroxide based cleaning solutions were found to be more effective in terms of low surface roughness and low etch rate. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2008-0061862) and an international cooperation program managed by the National Research Foundation of Korea (2011-0027711).en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSen_US
dc.subjectPost-Cu-CMPen_US
dc.subjectCesium hydroxideen_US
dc.subjectEthylene glycolen_US
dc.subjectNon-amine cleaning solutionen_US
dc.subjectBenzotriazoleen_US
dc.titleCharacterization of non-amine-based post-copper chemical mechanical planarization cleaning solutionen_US
dc.typeArticleen_US
dc.relation.volume122-
dc.identifier.doi10.1016/j.mee.2014.02.034-
dc.relation.page33-39-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorManivannan, Ramachandran-
dc.contributor.googleauthorCho, Byoung-Jun-
dc.contributor.googleauthorXiong, Hailin-
dc.contributor.googleauthorRamanathan, Srinivasan-
dc.contributor.googleauthorPark, Jin-Goo-
dc.relation.code2014036027-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjgpark-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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