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A Precision On-Chip Measurement Technique for Dielectric Absorption of an Integrated Capacitor

Title
A Precision On-Chip Measurement Technique for Dielectric Absorption of an Integrated Capacitor
Author
권오경
Keywords
DA measurement; dielectric absorption (DA); measurement accuracy; metal-insulator-metal (MIM) capacitor; off-leakage current cancelation; short-term repeatability; standard deviation of DA
Issue Date
2014-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Citation
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 권: 63, 호: 6, 페이지: 1613-1619
Abstract
This paper presents a precision dielectric absorption measurement method to characterize integrated capacitors. Conventional methods using an oscilloscope have measurement error due to the resolution limitation of the oscilloscope and the off-leakage current of the control switches. We improve the measurement accuracy by employing a switch without off-leakage current and a readout amplifier to minimize the influence of installation noise and environmental noise. Test chips were fabricated using a 0.18-mu m CMOS process technology. The test chip consists of a metal-insulator-metal capacitor and measurement circuits. The measured standard deviations of the recovery level and short-term repeatability are 43.2 and 31.0 ppm, respectively. These results show that the proposed method is very accurate and stable compared with the conventional one.
URI
http://ieeexplore.ieee.org/abstract/document/6676794/http://hdl.handle.net/20.500.11754/47609
ISSN
0018-9456; 1557-9662
DOI
10.1109/TIM.2013.2291951
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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