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Multilevel charging and discharging mechanisms of nonvolatile memory devices based on nanocomposites consisting of monolayered Au nanoparticles embedded in a polystyrene layer

Title
Multilevel charging and discharging mechanisms of nonvolatile memory devices based on nanocomposites consisting of monolayered Au nanoparticles embedded in a polystyrene layer
Author
김태환
Keywords
FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING-DIODES; FLASH MEMORY; GATE
Issue Date
2014-01
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS; JAN 13 2014, Vol.104, No.2, 3p.
Abstract
Capacitance-voltage (C-V) curves for Al/Au nanoparticles embedded in a polystyrene (PS) layer/p-Si devices at 300 K showed a metal-insulator-semiconductor behavior with flat-band voltage shifts of the C-V curves due to the existence of charge trapping. Memory windows between 2.6 and 9.9 V were observed at different sweep voltages, indicative of multilevel behavior. Capacitance-time measurements demonstrated that the charge-trapping capability of Au nanoparticles embedded in a PS layer was maintained for retention times larger than 1 x 10(4) s without significant degradation. The multilevel charging and discharging mechanisms of the memory devices are described on the basis of the experimental results. (C) 2014 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/pdf/10.1063/1.4861928http://hdl.handle.net/20.500.11754/47512
ISSN
0003-6951
DOI
10.1063/1.4861928
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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