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The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics

Title
The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics
Author
박진성
Keywords
Atomic layer deposition; Transparent conducting oxide; Tin oxide; Hydrogen peroxide
Issue Date
2014-06
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
APPLIED SURFACE SCIENCE, 권: 313, 페이지: 585-590
Abstract
The ALD SnO2 thin films were investigated as a function of growth temperature to obtain optimized process and film properties using tetrakis(dimethylamino)tin as a Sn precursor, and hydrogen peroxide as reactant. The film growth shows 1.2 angstrom/cycle in the 100-200 degrees C temperature range and follows typical ALD window behavior. ALD SnO2 thin films show low resistivity (9.7 x 10(-4) Omega cm) at 200 degrees C, and high carrier mobility (22 cm(2)/V sec). The transmittance of 40 nm ALD SnO2 films was over 80% at all of temperatures. The growth behavior, film composition, chemical bonding states, film crystallinity, electronic structure, and optical properties were investigated in order to verify the origin of the electrical properties as a function of growth temperature. These data show that the favorable properties of ALD SnO2 are due to the electronic band structure change associated with poly-crystalline formation. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0169433214012987?via%3Dihubhttp://hdl.handle.net/20.500.11754/47410
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2014.06.027
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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