Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors
- Title
- Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors
- Author
- 정재경
- Keywords
- ROOM-TEMPERATURE; FABRICATION
- Issue Date
- 2016-04
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 108, NO 15, Page. 1-1
- Abstract
- Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 degrees C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm(2)/Vs, subthreshold swing (SS) of 0.39V/decade, threshold voltage (V-TH) of 1.5 V, and I-ON/OFF ratio of similar to 10(7). A significant improvement in the field-effect mobility (up to similar to 33.5 cm(2)/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V-TH, or I-ON/OFF ratio due to the presence of a highly ordered microstructure. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/10.1063/1.4947063http://hdl.handle.net/20.500.11754/47358
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4947063
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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