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High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors

Title
High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors
Author
박진성
Keywords
Silicon-doped InSnO; thin-film transistor; oxide semiconductor; high mobility; stability; GE
Issue Date
2014-06
Publisher
SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Citation
Journal of electronic materials, Vol.43 No.9 [2014], p 3177-3183
Abstract
We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm(2)/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm(2)/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.
URI
https://link.springer.com/article/10.1007%2Fs11664-014-3211-5http://hdl.handle.net/20.500.11754/47341
ISSN
0361-5235; 1543-186X
DOI
10.1007/s11664-014-3211-5
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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