Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-15T06:58:09Z | - |
dc.date.available | 2018-03-15T06:58:09Z | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | ACS applied materials & interfaces, 2014, 6(16), pp. 13496 - 13501 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/am502571w | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47296 | - |
dc.description.abstract | We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) (2011-0028819). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.subject | high-pressure annealing | en_US |
dc.subject | InGaZnO | en_US |
dc.subject | post process | en_US |
dc.subject | thin-film transistor | en_US |
dc.subject | oxide thin-film transistor | en_US |
dc.title | Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 16 | - |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1021/am502571w | - |
dc.relation.page | 13496-13501 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Yoon, Seokhyun | - |
dc.contributor.googleauthor | Tak, Young Jun | - |
dc.contributor.googleauthor | Yoon, Doo Hyun | - |
dc.contributor.googleauthor | Choi, Uy Hyun | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Ahn, Byung Du | - |
dc.contributor.googleauthor | Kim, Hyun Jae | - |
dc.relation.code | 2014023980 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.