Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
- Title
- Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
- Author
- 박진성
- Keywords
- high-pressure annealing; InGaZnO; post process; thin-film transistor; oxide thin-film transistor
- Issue Date
- 2014-08
- Publisher
- AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- Citation
- ACS applied materials & interfaces, 2014, 6(16), pp. 13496 - 13501
- Abstract
- We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.
- URI
- https://pubs.acs.org/doi/abs/10.1021/am502571whttp://hdl.handle.net/20.500.11754/47296
- ISSN
- 1944-8244; 1944-8252
- DOI
- 10.1021/am502571w
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML