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Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

Title
Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
Author
박진성
Keywords
high-pressure annealing; InGaZnO; post process; thin-film transistor; oxide thin-film transistor
Issue Date
2014-08
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
ACS applied materials & interfaces, 2014, 6(16), pp. 13496 - 13501
Abstract
We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.
URI
https://pubs.acs.org/doi/abs/10.1021/am502571whttp://hdl.handle.net/20.500.11754/47296
ISSN
1944-8244; 1944-8252
DOI
10.1021/am502571w
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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