Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells
- Title
- Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells
- Author
- 김태환
- Keywords
- InzGaxAl1-z-xP/InAlP MQWs; Electronic state; Interband transition; Excitonic transition
- Issue Date
- 2012-11
- Publisher
- 한국물리학회
- Citation
- Journal of the Korean Physical Society, 2012, 61(10), P.1724-1727
- Abstract
- Strained InGaAlP/In0.5Al0.5P multiple quantum wells (MQWs) with digital alloy wells made of alternating 3-monolayer In0.5Ga0.5P and 2-monolayer In0.5Al0.5P layers were grown by using molecular-beam epitaxy. The electronic subband energy states and the interband transition energies of the InGaAlP/InAlP MQWs were calculated by using the finite element method to solve the Schrodinger equation in an 8-band envelope function approximation including the strain effects. The calculated interband transitions of the InGaAlP/InAlP MQWs were in reasonable agreement with the excitonic transitions obtained from the photoluminescence spectra.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.61.1724http://hdl.handle.net/20.500.11754/47185
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.61.1724
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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