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Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer

Title
Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer
Author
김태환
Keywords
Organic bistable devices, P3HT; PMMA; Self-separation; Electrical bistability; Memory stability
Issue Date
2012-11
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Organic Electronics, November 2012, 13(11), P.2485-2488
Abstract
Organic bistable devices (OBDs) with a poly(methylmethacrylate) (PMMA)/poly(3-hexylthiophene) (P3HT) hybrid layer, acting as a charge storage region, formed by using a vertical phase self-separation method were fabricated. The current-voltage curves of the All P3HT/PMMA/indium-tin-oxide devices exhibited current bistabilities with a maximum ON/OFF ratio of 1 x 10(4). The write-read-erase-read sequence results demonstrated the switching characteristics of the OBDs. The cycling endurance number of the ON/OFF switching for the OBD was above 1 x 10(5). The memory characteristics of the OBDs were attributed to trapping and detrapping processes of electrons into and out of the P3HT/PMMA heterointerfaces. (C) 2012 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S1566119912002571?via%3Dihubhttp://hdl.handle.net/20.500.11754/47166
ISSN
1566-1199
DOI
10.1016/j.orgel.2012.06.004
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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