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Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory

Title
Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory
Author
윤태현
Keywords
in situ; scanning transmission X-ray microscopy; STXM; graphene oxide; GO-RRAM; bipolar resistive switching mechanism; oxygen ion drift model
Issue Date
2014-01
Publisher
INT UNION CRYSTALLOGRAPHY
Citation
JOURNAL OF SYNCHROTRON RADIATION; JAN 2014, 21, p170-p176
Abstract
Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.
URI
http://onlinelibrary.wiley.com/doi/10.1107/S1600577513026696/abstracthttp://hdl.handle.net/20.500.11754/47156
ISSN
1600-5775
DOI
10.1107/S1600577513026696
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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