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dc.contributor.author전형탁-
dc.date.accessioned2018-03-15T01:43:18Z-
dc.date.available2018-03-15T01:43:18Z-
dc.date.issued2014-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, Vol.104, No.4,en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttp://aip.scitation.org/doi/pdf/10.1063/1.4862537-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/46963-
dc.description.abstractWe demonstrate an enhanced electrical stability through a Ti oxide (TiOx) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiOx thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiOx depend on the surface polarity change and electronic band structure evolution. This result indicates that TiOx on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters. (C) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipThis work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0015436) and was also supported by the Basic Science Program (NRF-2012R1A1A1005014) through the National Research Foundation (NRF) of MEST, Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USAen_US
dc.subjectCARRIER TRANSPORTen_US
dc.subjectSEMICONDUCTORen_US
dc.subjectTFTSen_US
dc.titleSignificant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifieren_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume104-
dc.identifier.doi10.1063/1.4862537-
dc.relation.page42103-42103-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorCho, Byungsu-
dc.contributor.googleauthorChoi, Yonghyuk-
dc.contributor.googleauthorJeon, Heeyoung-
dc.contributor.googleauthorShin, Seokyoon-
dc.contributor.googleauthorSeo, Hyungtak-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2014025338-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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