40 0

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Title
Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
Author
전형탁
Keywords
CARRIER TRANSPORT; SEMICONDUCTOR; TFTS
Issue Date
2014-01
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, Vol.104, No.4,
Abstract
We demonstrate an enhanced electrical stability through a Ti oxide (TiOx) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiOx thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiOx depend on the surface polarity change and electronic band structure evolution. This result indicates that TiOx on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters. (C) 2014 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/pdf/10.1063/1.4862537http://hdl.handle.net/20.500.11754/46963
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4862537
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE