A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays
- Title
- A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays
- Author
- 최병덕
- Keywords
- THIN-FILM TRANSISTORS; AMORPHOUS-SILICON TFTS; BIAS-STRESS; INSTABILITY MECHANISMS; LCD APPLICATION; DEPENDENCE; CIRCUITS; STABILITY; DESIGN; TIME
- Issue Date
- 2014-01
- Publisher
- IEEE
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS; MAR 2014,53(3), Pages: 107 - 110
- Abstract
- In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver circuit based on a decoder with parallel TFTs. All a-Si: H TFTs in the proposed gate driver have duty ratios of 50% or less to suppress the threshold voltage (V-TH) shift, but at the same time, the output can avoid a high-impedance state to resist against noises. The proposed gate driver also removes dead time, and reduces the circuit area and the number of TFTs compared with the previously reported decoder-type and demultiplexer-type integrated gate drivers. The simulation results show that the rising time and falling time are 2.47 and 2.43 mu s, respectively, with a -5 to 30V output voltage swing, which are suitable for full high-definition (full-HD) format active-matrix displays at a 120Hz frame frequency. (C) 2014 The Japan Society of Applied Physics
- URI
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6617789http://hdl.handle.net/20.500.11754/46423
- ISBN
- 978-4-86348-309-5
- ISSN
- 0021-4922
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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