Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes

Title
Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
Other Titles
GaN Light-Emitting Diodes
Author
신동수
Keywords
P-N-JUNCTIONS; QUANTUM-WELLS; EFFICIENCY; LEDS; GAN
Issue Date
2013-05
Publisher
Japan SOC Applied Physics
Citation
Applied Physic Express, 2013, 6(5), P.052105
Abstract
Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigated in InGaN blue light-emitting diodes (LEDs). Each radiative and nonradiative current components were separated from the total current by using the information of the internal quantum efficiency (IQE), obtained from the temperature-dependent electroluminescence measurement. By analyzing voltage and light output power as functions of nonradiative current, we were able to understand that the dominant nonradiative mechanisms of the LEDs vary with the competing mechanisms of Shockley-Read-Hall or tunneling recombination at low current density to the carrier overflow at high current density, inducing the IQE droop. (c) 2013 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/APEX.6.052105/meta
ISSN
1882-0778
DOI
10.7567/APEX.6.052105
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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