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Tunnel current through virus particles between columnar structures in mesoporous silicon

Title
Tunnel current through virus particles between columnar structures in mesoporous silicon
Author
정재일
Keywords
columnar structures; porous silicon; tunneling; viruses
Issue Date
2011-07
Publisher
WILEY-BLACKWELL PUBLISHING INC
Citation
Physica status solidi. PSS. A, Applications and materials science, 2011, 208(7), P.1683-1687
Abstract
Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper to establish that this observed tunnel current is connected to a conduction path through virus particles. The plant NEPO viruses have an orbicular shape with a diameter of around 25-30 nm. This size is matched well to the porous size distribution in manufactured samples. The tunnel charge transport in semiconductor structures was not observed on loading protein macromolecules of smaller sizes. A physical mechanism of the observed phenomena can be interpreted to be the result of a shunting effect through virus particles between the two closely located columnar silicon structures. This effect is likely to result from double points at virus adsorption under the condition of matching of pore and virus sizes. The magnitudes of the tunnel barrier heights depend on the type of loaded plant viruses. The investigated columnar structures of mesoporous silicon can be used for research on the electrical properties of different viruses with corresponding sizes in the range of 20-30 nm. The existence of a tunnel current between columnar structures in mesoporous silicon under virus adsorption can be used as a simple method for their detection in the environment. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201026662/full
ISSN
1862-6300
DOI
10.1002/pssa.201026662
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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