Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model

Title
Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model
Other Titles
sapphire epi-wafers and subsequent stress analysis by using a theoretical model
Author
신동수
Keywords
Semiconducting wafers; Light emitting diodes; Gallium nitride; Data modeling; Sapphire; Sensors; Stress analysis
Issue Date
2011-01
Publisher
International Society for Optical Engineering
Citation
PROCEEDINGS - SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 2011, 7939, P.7939 2B
Abstract
We present our approach to measure the profile of nonuniformly bent GaN epi-wafers grown on sapphire substrates. By using a laser displacement sensor, the position of the epi-wafer is accurately measured and mapped. From the measured profile data, analysis of stress distributions over the nonuniformly bent wafer is performed by using a theoretical model. We show the result of theoretical analysis of how the stress tensors distribute over a wafer. The estimated stress tensors are related with optical properties such as photoluminescence of the wafer.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7939/1/Measurement-of-nonuniform-bowing-in-GaN-sapphire-epi-wafers-and/10.1117/12.874127.short?SSO=1http://hdl.handle.net/20.500.11754/45894
ISSN
0277-786X
DOI
10.1117/12.874127
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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