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Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

Title
Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures
Author
박진성
Keywords
OXIDE
Issue Date
2014-05
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, 권: 104, 호: 18, 논문 번호: 182106
Abstract
Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films. Combinatorial analysis revealed that the electrical characteristics of GZTO films are strongly correlated to changes in electronic structure. The increase in carrier concentration is related to the generation of vacancies by the changes of oxygen coordination around the cationic metal and the shallow band edge state below the conduction band. On the other hand, the decrease of mobility can be explained by the deep band edge state, and the difference between the experimental conduction band and simulated conduction band by the combinatorial electronic structure based on the chemical composition. (C) 2014 AIP Publishing LLC.
URI
https://aip.scitation.org/doi/10.1063/1.4875044http://hdl.handle.net/20.500.11754/45876
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4875044
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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