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p-Si 기판에 성장한 BaTiO3 박막의 두께와 구조적 특성과의 관계

Title
p-Si 기판에 성장한 BaTiO3 박막의 두께와 구조적 특성과의 관계
Author
김선진
Keywords
BaTiO3 thin film; RF-magnetron sputtering; GDS
Issue Date
2013-06
Publisher
한국재료학회
Citation
한국재료학회지, 2013, 23(6), P.334-338, 5P.
Abstract
In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.
URI
http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=GJRHBQ_2013_v23n6_334
ISSN
2287-7258; 1225-0562
DOI
10.3740/MRSK.2013.23.6.334
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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