Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-03-13T02:48:43Z | - |
dc.date.available | 2018-03-13T02:48:43Z | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 6, Page. 1-11 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/srep24787 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/45809 | - |
dc.description.abstract | High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a Zn metal target in a plasma mixture of Ar, N-2, and O-2 gas. The RF power and the O-2 to N-2 gas flow rates were systematically adjusted to prepare a set of ZnON films with different relative anion contents. The carrier density was found to be greatly affected by the anion composition, while the electron mobility is determined by a fairly complex mechanism. First-principles calculations indicate that excess vacant nitrogen sites (V-N) in N-rich ZnON disrupt the local electron conduction paths, which may be restored by having oxygen anions inserted therein. The latter are anticipated to enhance the electron mobility, and the exact process parameters that induce such a phenomenon can only be found experimentally. Contour plots of the Hall mobility and carrier density with respect to the RF power and O-2 to N-2 gas flow rate ratio indicate the existence of an optimum region where maximum electron mobility is obtained. Using ZnON films grown under the optimum conditions, the fabrication of high-performance devices with field-effect mobility values exceeding 120 cm(2)/Vs is demonstrated based on simple reactive RF sputtering methods. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No: 2014R1A1A2055138) and also supported by the MOTIE (Ministry of Trade, Industry & Energy (Grant No: 10051403)) and KDRC (Korea Display Research Corporation) support program for the development of future devices technology for display industry. | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | HIGH-MOBILITY | en_US |
dc.subject | HIGH-PERFORMANCE | en_US |
dc.subject | STABILITY | en_US |
dc.subject | ZN3N2 | en_US |
dc.subject | DEPOSITION | en_US |
dc.subject | NITROGEN | en_US |
dc.subject | DEFECTS | en_US |
dc.subject | ENERGY | en_US |
dc.subject | STATES | en_US |
dc.title | A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content | en_US |
dc.type | Article | en_US |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1038/srep24787 | - |
dc.relation.page | 1-11 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Kim, Yang Soo | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Park, Yun Chang | - |
dc.contributor.googleauthor | Kim, Hyun You | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Kim, Hyun-Suk | - |
dc.relation.code | 2016012537 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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