Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon

Title
Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
Author
방진호
Keywords
metal assisted chemical etching; metal impurities; metallurgical silicon; photoelectrochemical cell; silicon nanowire
Issue Date
2013-06
Publisher
WILEY
Citation
Advanced Materials, 18 June 2013, 25(23), p.3187-3191
Abstract
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
URI
http://onlinelibrary.wiley.com/doi/10.1002/adma.201300973/abstracthttp://hdl.handle.net/20.500.11754/45760
ISSN
1521-4095
DOI
10.1002/adma.201300973
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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