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dc.contributor.author정두석-
dc.date.accessioned2018-03-13T01:36:46Z-
dc.date.available2018-03-13T01:36:46Z-
dc.date.issued2013-12-
dc.identifier.citationNanoscale, Vol.5, No.24 [2013], p12598-12606en_US
dc.identifier.issn2040-3372-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2013/NR/c3nr03993e#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/45701-
dc.description.abstractBipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx-Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current-voltage (I-V) hysteresis of ECM cells whereas Type 2 ECM cell, Pt (bottom electrode)/Ge0.3Se0.7/SiOx/Cu(top electrode), showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in Type 2 cell is lower than that in Type 1 cell while on-switching voltage in both cells is almost the same. An attempt to understand this electrolyte-stack-sequence-depending switching polarity reversal was made in terms of the ECM cell potential change upon the electrolyte stack sequence and the consequent change in Cu filament growth direction. Relevant experimental evidence for the hypothesis was obtained regarding the switching behaviours. Furthermore, given the switching polarity reversal, feasibility of serial complementary resistive switches was also demonstrated.en_US
dc.description.sponsorshipD.S.J. acknowledges the Korea Institute of Science and Technology grants (grant nos 2V02820 and 2E24012).en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.subjectCOMPLEMENTARY RESISTIVE SWITCHESen_US
dc.subjectREAL-TIME OBSERVATIONen_US
dc.subjectATOMIC SWITCHen_US
dc.subjectDYNAMIC GROWTH/DISSOLUTIONen_US
dc.subjectCONDUCTIVE FILAMENTSen_US
dc.subjectWORK FUNCTIONen_US
dc.subjectMEMORY CELLSen_US
dc.subjectNANOIONICSen_US
dc.subjectPLASTICITYen_US
dc.subjectSYNAPSESen_US
dc.titleBipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c3nr03993e-
dc.relation.journalNANOSCALE-
dc.contributor.googleauthorSoni, R.-
dc.contributor.googleauthorMeuffels, P.-
dc.contributor.googleauthorPetraru, A.-
dc.contributor.googleauthorHansen, M.-
dc.contributor.googleauthorZiegler, M.-
dc.contributor.googleauthorVavra, O.-
dc.contributor.googleauthorKohlstedt, H.-
dc.contributor.googleauthorJeong, D.S.-
dc.relation.code2013011385-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
dc.identifier.researcherID7102257240-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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