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Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes

Title
Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
Author
정두석
Keywords
COMPLEMENTARY RESISTIVE SWITCHES; REAL-TIME OBSERVATION; ATOMIC SWITCH; DYNAMIC GROWTH/DISSOLUTION; CONDUCTIVE FILAMENTS; WORK FUNCTION; MEMORY CELLS; NANOIONICS; PLASTICITY; SYNAPSES
Issue Date
2013-12
Publisher
Royal Society of Chemistry
Citation
Nanoscale, Vol.5, No.24 [2013], p12598-12606
Abstract
Bipolar switching behaviours of electrochemical metallization (ECM) cells with dual-layer solid electrolytes (SiOx-Ge0.3Se0.7) were analyzed. Type 1 ECM cell, Pt (bottom electrode)/SiOx/Ge0.3Se0.7/Cu (top electrode), exhibited typical eightwise current-voltage (I-V) hysteresis of ECM cells whereas Type 2 ECM cell, Pt (bottom electrode)/Ge0.3Se0.7/SiOx/Cu(top electrode), showed counter-eightwise hysteresis. In addition, absolute off-switching voltage in Type 2 cell is lower than that in Type 1 cell while on-switching voltage in both cells is almost the same. An attempt to understand this electrolyte-stack-sequence-depending switching polarity reversal was made in terms of the ECM cell potential change upon the electrolyte stack sequence and the consequent change in Cu filament growth direction. Relevant experimental evidence for the hypothesis was obtained regarding the switching behaviours. Furthermore, given the switching polarity reversal, feasibility of serial complementary resistive switches was also demonstrated.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2013/NR/c3nr03993e#!divAbstracthttp://hdl.handle.net/20.500.11754/45701
ISSN
2040-3372
DOI
10.1039/c3nr03993e
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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