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Effect of ambient pressure on the selective growth of square In2O3 nanowires

Title
Effect of ambient pressure on the selective growth of square In2O3 nanowires
Author
백운규
Keywords
semiconductors; oxides; nanostructured materials; crystal growth
Issue Date
2013-05
Publisher
Korean INST Metals Material
Citation
Metals and Material International, 2013, 19(3), P.623-627
Abstract
Single crystalline indium oxide (In2O3) nanowires (NWs), formed via a simple vapor transport route, were synthesized by a selective growth approach on patterned SiO2/Si substrates. The selective growth approach enabled us to have a more systematic analysis of the effects of the synthesizing parameters on the growth of the NWs. In this study, the ambient pressure in the quartz tube was controlled in the range of 250-1,000 mTorr, and the dependence of NW size and density was investigated. Statistical analyses demonstrate that the ambient pressure plays an important role in determining the nucleation and crystal growth of In2O3 NWs, thereby affects the diameter, length, and density of the NWs. Our result indicates that the interplay between the source export and the absorption import as well as the coalescence of catalyst droplets are mainly affected by ambient pressure in the quartz tube, which eventually contributes to the yield of NWs on catalytic substrates.
URI
https://link.springer.com/article/10.1007%2Fs12540-013-3014-x
ISSN
1598-9623
DOI
10.1007/s12540-013-3014-x
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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