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Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene

Title
Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
Author
박재근
Keywords
nonvolatile; polymer; memory; nanocrystal; Ni
Issue Date
2013-05
Publisher
IEICE
Citation
IEICE Transactions on Electronics, May 2013, 96(5), P.699-701
Abstract
In summary, we successfully fabricated the nonvolatile hybrid polymer 4F(2) memory-cell. It was based on bistable state, which was observed in PS layer that is containing a Ni nanocrystals capped with NiO tunneling barrier sandwiched by Al electrodes. The current conduction mechanism for polymer memory-cell was demonstrated by fitting the I-V curves. The electrons were charged and discharged on Ni nanocrystals by tunneling through the NiO tunneling barrier. In addition, the memory-cell showed a good and reproducible nonvolatile memory-cell characteristic. Its memory margin is about 1.4 x 10. The retention-time is more than 10(5) seconds and the endurance cycles of program-and-erase is more than 250 cycles. Furthermore, Thefore, polymer memory-cell would be good candidates for nonvolatile 4F(2) cross-bar memory-cell.
URI
https://www.jstage.jst.go.jp/article/transele/E96.C/5/E96.C_699/_article
ISSN
0916-8524
DOI
10.1587/transele.E96.C.699
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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