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원자층증착 기술: 개요 및 응용분야

Title
원자층증착 기술: 개요 및 응용분야
Other Titles
Atomic Layer Deposition: Overview and Applications
Author
전형탁
Keywords
atomic layer deposition; self-limiting; surface reaction; spatial ALD
Issue Date
2013-08
Publisher
한국재료학회
Citation
한국재료학회지(Korean Journal of Materials Research), Aug 2013, 23(8), P.405-422, 18P.
Abstract
Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses H2O and O3 as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.
URI
http://db.koreascholar.com/Article?code=297468http://db.koreascholar.com/Search/Journal/IssueList?pub=681&jour=873http://hdl.handle.net/20.500.11754/45487
ISSN
2287-7258; 1225-0562
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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