Band gap modulation of ZnTe1-xOx alloy film by control of oxygen gas flow rate during reactive magnetron sputtering
- Title
- Band gap modulation of ZnTe1-xOx alloy film by control of oxygen gas flow rate during reactive magnetron sputtering
- Author
- 김은규
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; EPITAXIAL-GROWTH; ZNTE; GLASSES
- Issue Date
- 2013-12
- Publisher
- AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
- Citation
- Applied Physics Letters, Vol.103, No.26 [2013], p
- Abstract
- The band gap energy of ZnTe1-xOx alloy films grown on c-plane sapphire substrates was modulated by controlling the argon-oxygen ratio during radio frequency magnetron sputtering. The ZnTe1-xOx samples were deposited at a substrate temperature of 200 degrees C and with gas mixtures of 2%-8% oxygen in argon. The optical transparency of the ZnTe1-xOx samples was measured in the 1.5-6.0 eV energy range by optical transmission spectra. The optical band gap, obtained from plots of (alpha h nu)(2) as a function of h nu, increased from 2.2 to 4.9 eV with increasing oxygen ratio, believed to be a result of a change in bonding structure through composition exchange during film deposition by reactive magnetron sputtering. These results show that the band gap energy of ZnTe1-xOx, ZnOTeO, and (ZnO)(1-x)(TeO2)(x) alloy films can be modulated, making them more suited for applications as windows and as active layers for ZnTe-based intermediate band solar cells. (C) 2013 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/10.1063/1.4856375http://hdl.handle.net/20.500.11754/45211
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4856375
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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